![simple delay circuit simple delay circuit](http://www.seekic.com/uploadfile/ic-circuit/20097784524714.gif)
In general, the physical damage caused by plasma etching is induced by high energy ion bombardment on the Si. Other methods in which the process time is long or steps are added are also undesirable in terms of mass production and cost. In addition, it is difficult to use a method with a large physical dimension change because there are many types of DCs with different shapes, depths, and sizes in DRAM devices.
#SIMPLE DELAY CIRCUIT TRIAL#
Changing materials to lower the energy barrier (e.g., silicidation processes) requires a lot of trial and error, because a small dislocation created during the process acts as a large leakage path and finally increases the overall standby current of the DRAM devices. In particular, in the case of PMOSFETs, reliability issues such as hot electron–induced punchthrough (HEIP) can be critical due to the lateral penetration of dopants. Increasing the dose or energy levels of the plug implantation and adopting cryogenic or pre-amorphization techniques cause an increase in leakage due to high electric fields and plug effects. However, as distances between the gate and the direct contact (DC) are very close to several tens of nm or even less, most of these methods lead to an increase in leakage. To overcome these difficulties, many experiments have been conducted to improve the R C, such as strengthening the plug implantation, introducing a new material to lower the energy barrier, and broadening the contact surface area.
![simple delay circuit simple delay circuit](https://i.pinimg.com/originals/c3/f7/b0/c3f7b09b6accdf42d40d803f92e9d3ae.jpg)
This simple and short time process will be considered essential for both mobile applications and automotive applications of dynamic random access memory (DRAM) devices requiring a low-voltage and low-temperature operation. However, this increase can be reduced to 17% by applying the soft treatment for 10 s. The t PD increases by 19.3% when the temperature decreases from 85 ☌ to −25 ☌, and the operating voltage decreases from 1.2 V to 0.95 V at the same time. At −25 ☌, the saturation current of the PMOSFET increased by 3% and the propagation delay time ( t PD) decreased by 2%. As a result, the resistances of both the n+ and p+ contacts decreased for all contact sizes and the standard deviations at the cold temperature were suppressed by 45%. We found by transmission electron microscope (TEM) analysis that the damaged amorphous layer reduced from 52 Å to 42 Å and 35 Å with a treatment time of 10 and 20 s, respectively. We removed the plasma-induced damage on the Si using a simple in situ Si soft treatment technique.
![simple delay circuit simple delay circuit](https://elonics.org/sites/default/files/inline-images/simple-delay-timer-schematic.png)
In this work we report on the improvement in cold temperature characteristics of PMOSFETs and inverter circuits by removing the plasma-damaged layer of the source/drain contacts.